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| 2N720A HIGH VOLTAGE GENERAL PURPOSE DESCRIPTION The 2N720A is a silicon planar epitaxial NPN transistor in Jedec TO-18 metal case. It is suitable for a wide variety of amplifier and switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTEMAXIMUM RATINGS Symbol V CBO V CEO V EBO IC Pt o t T st g, T j October 1988 Parameter Collector-base Voltage (I E = 0) Collector-emitter Voltage (I R = 0) Emitter-base Voltage (I C = 0) Collector Current Total Power Dissipation at T amb 25 C at T cas e 25 C Storage and Junction Temperature Value 120 80 7 500 0.5 1.8 - 65 to 200 Unit V V V mA W W C 1/4 2N720A THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 97.2 350 C/W C/W ELECTRICAL CHARACTERISTICS(T a mb = 25 C unless otherwise specified) Symbol I CBO V (B R)CBO Parameter Collector Cutoff Current (I E = 0) Collector-base Breakdown Voltage (I E = 0) Collector-emitter Breakdown Voltage (I B = 0) Emitter-base Breakdown Voltage (I E = 0) Emitter Cuttoff Current (I E = 0) Collector-emitter Saturation Voltage Base-emitter Saturation Voltage DC Current Gain Test Conditions V CB = 90 V I C = 100 A 120 Min. Typ. Max. 10 Unit nA V V (BR)CE O * I C = 30 mA 80 V V (B R)E BO I E = 100 A 7 V I E BO V CE( sat )* V BE( sat )* h F E* VE B = 5 V I C = 50 mA I C = 150 mA I C = 50 mA I C = 150 mA I C = 100 A I C = 10 mA I C = 150 mA I C = 50 mA f = 20 MHz IE = 0 f = 1 MHz IC = 0 f = 1 MHz I B = 5 mA I B = 15 mA I B = 5 mA I B = 15 mA V CE = 10 V V CE = 10 V V CE = 10 V V CE = 10 V V CB = 10 V V EB = 0.5 V 20 35 40 2.5 10 1.2 5 0.9 1.3 nA V V V V - - - - 120 hfe C CBO C EBO High Frequency Current Gain Collector-base Capacitance Emitter-base Capacitance 15 85 pF pF * Pulsed : pulse duration = 300 s, duty cycle = 1 %. 2/4 2N720A TO-18 MECHANICAL DATA mm DIM. MIN. A B D E F G H I L 45o 2.54 1.2 1.16 45o TYP. 12.7 0.49 5.3 4.9 5.8 0.100 0.047 0.045 MAX. MIN. TYP. 0.500 0.019 0.208 0.193 0.228 MAX. inch D G I H E F A L C B 0016043 3/4 2N720A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4 |
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